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IPD80P03P4L07ATMA2

Infineon Technologies

Product No:

IPD80P03P4L07ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 30V 80A TO252-31

Quantity:

Delivery:

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Payment:

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In Stock : 21743

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.767

    $1.767

  • 10

    $1.46775

    $14.6775

  • 100

    $1.16831

    $116.831

  • 500

    $0.988532

    $494.266

  • 1000

    $0.838755

    $838.755

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.8mOhm @ 80A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 130µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 88W (Tc)
Series Automotive, AEC-Q101, OptiMOS®-P2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) +5V, -16V
Package Tape & Reel (TR)
Base Product Number IPD80P03

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