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IPDQ60R040S7AXTMA1

Infineon Technologies

Product No:

IPDQ60R040S7AXTMA1

Manufacturer:

Infineon Technologies

Package:

PG-HDSOP-22-1

Batch:

-

Datasheet:

-

Description:

MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 12 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 40mOhm @ 13A, 12V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 790µA
Supplier Device Package PG-HDSOP-22-1
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 272W (Tc)
Series Automotive, AEC-Q101, CoolMOS™
Package / Case 22-PowerBSOP Module
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 12V
Package Tape & Reel (TR)
Base Product Number IPDQ60R

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