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IPF050N10NF2SATMA1

Infineon Technologies

Product No:

IPF050N10NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Batch:

Datasheet:

Description:

MOSFET

Quantity:

Delivery:

Payment:

In Stock : 796

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.033

$2.033
10

$1.68815

$16.8815
100

$1.343775

$134.3775

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.05mOhm @ 60A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 84µA
Supplier Device Package	PG-TO263-7
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.8W (Ta), 150W (Tc)
Series	StrongIRFET™ 2
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 117A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)