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IPI040N06N3GHKSA1

Infineon Technologies

Product No:

IPI040N06N3GHKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 60V 90A TO262-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4mOhm @ 90A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 90µA
Supplier Device Package PG-TO262-3
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 188W (Tc)
Series OptiMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPI04N

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