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IPI076N12N3GAKSA1

Infineon Technologies

Product No:

IPI076N12N3GAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

MOSFET N-CH 120V 100A TO262-3

Quantity:

Delivery:

Payment:

In Stock : 500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.116

$3.116
10

$2.80155

$28.0155
100

$2.29577

$229.577
500

$1.954321

$977.1605
1000

$1.648231

$1648.231
2000

$1.565818

$3131.636
5000

$1.506956

$7534.78

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6640 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	101 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7.6mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 130µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	120 V
Power Dissipation (Max)	188W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPI076