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IPI110N20N3GAKSA1

Infineon Technologies

Product No:

IPI110N20N3GAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

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Description:

MOSFET N-CH 200V 88A TO262-3

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPI110N20N3GAKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPI110N20N3GAKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPI110N20N3GAKSA1 without requiring registration. Latest information on IPI110N20N3GAKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPI110N20N3GAKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	11mOhm @ 88A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 270µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	300W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPI110