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IPI120N04S401AKSA1

Infineon Technologies

Product No:

IPI120N04S401AKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 120A TO262-3

Quantity:

Delivery:

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Payment:

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In Stock : 500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.2015

    $3.2015

  • 10

    $2.87185

    $28.7185

  • 100

    $2.35334

    $235.334

  • 500

    $2.003379

    $1001.6895

  • 1000

    $1.689604

    $1689.604

  • 2000

    $1.60513

    $3210.26

  • 5000

    $1.544776

    $7723.88

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 176 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 140µA
Supplier Device Package PG-TO262-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 188W (Tc)
Series OptiMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPI120

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