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IPI50CN10NGHKSA1

Infineon Technologies

Product No:

IPI50CN10NGHKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 20A TO262-3

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1090 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 50mOhm @ 20A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 20µA
Supplier Device Package PG-TO262-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 44W (Tc)
Series OptiMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPI50C

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