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IPI65R660CFD

Infineon Technologies

Product No:

IPI65R660CFD

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 10483

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

424

$0.6745

$285.988

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	660mOhm @ 2.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 200µA
Supplier Device Package	PG-TO262-3-1
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	62.5W (Tc)
Series	CoolMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk