Home / Single FETs, MOSFETs / IPI80CN10N G

IPI80CN10N G

Infineon Technologies

Product No:

IPI80CN10N G

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 13A TO262-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPI80CN10N G, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPI80CN10N G and the required quantity in your RFQ. IICSEMI provides the latest quote for IPI80CN10N G without requiring registration. Latest information on IPI80CN10N G: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPI80CN10N G latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	716 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	80mOhm @ 13A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 12µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	31W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPI80C