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IPN50R650CEATMA1

Infineon Technologies

Product No:

IPN50R650CEATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-3

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Datasheet:

Description:

MOSFET N-CH 500V 9A SOT223

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	650mOhm @ 1.8A, 13V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.5V @ 150µA
Supplier Device Package	PG-SOT223-3
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	5W (Tc)
Series	CoolMOS™ CE
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	13V
Package	Tape & Reel (TR)
Base Product Number	IPN50R650