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IPN50R800CEATMA1

Infineon Technologies

Product No:

IPN50R800CEATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 500V 7.6A SOT223

Quantity:

Delivery:

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Payment:

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In Stock : 17790

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.6555

    $0.6555

  • 10

    $0.5719

    $5.719

  • 100

    $0.39596

    $39.596

  • 500

    $0.330828

    $165.414

  • 1000

    $0.281552

    $281.552

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 800mOhm @ 1.5A, 13V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 130µA
Supplier Device Package PG-SOT223
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 5W (Tc)
Series CoolMOS™ CE
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 13V
Package Tape & Reel (TR)
Base Product Number IPN50R800

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