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IPP04CN10NGXKSA1

Infineon Technologies

Product No:

IPP04CN10NGXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

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Description:

MV POWER MOS

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPP04CN10NGXKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPP04CN10NGXKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPP04CN10NGXKSA1 without requiring registration. Latest information on IPP04CN10NGXKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPP04CN10NGXKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.2mOhm @ 100A, 10V
Product Status	Last Time Buy
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	300W (Tc)
Series	OptiMOS™ 2
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP04CN10