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IPP04N03LA

Infineon Technologies

Product No:

IPP04N03LA

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

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Datasheet:

Description:

MOSFET N-CH 25V 80A TO220-3

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Parameter Info

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3877 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.2mOhm @ 55A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 60µA
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	107W (Tc)
Series	OptiMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IPP04N