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IPP12CN10LGXKSA1

Infineon Technologies

Product No:

IPP12CN10LGXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 69A TO220-3

Quantity:

Delivery:

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Payment:

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In Stock : 912

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.957

    $1.957

  • 10

    $1.75655

    $17.5655

  • 100

    $1.411795

    $141.1795

  • 500

    $1.159931

    $579.9655

  • 1000

    $0.961096

    $961.096

  • 2000

    $0.894814

    $1789.628

  • 5000

    $0.861669

    $4308.345

  • 10000

    $0.828533

    $8285.33

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 12mOhm @ 69A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 83µA
Supplier Device Package PG-TO220-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 125W (Tc)
Series OptiMOS™
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 69A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number IPP12CN10

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