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IPP80CN10NGXKSA1

Infineon Technologies

Product No:

IPP80CN10NGXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-123

Batch:

-

Datasheet:

-

Description:

PFET, 13A I(D), 100V, 0.08OHM, 1

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 5891

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 649

    $0.437

    $283.613

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 716 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 80mOhm @ 13A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 12µA
Supplier Device Package PG-TO220-3-123
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 31W (Tc)
Series OptiMOS™ 2
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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