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IPS031N03LGAKMA1

Infineon Technologies

Product No:

IPS031N03LGAKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3-11

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Description:

LV POWER MOS

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.1mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PG-TO251-3-11
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	94W (Tc)
Series	OptiMOS™ 3
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube