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IPS12CN10LGBKMA1

Infineon Technologies

Product No:

IPS12CN10LGBKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3-11

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Datasheet:

Description:

MOSFET N-CH 100V 69A TO251-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	11.8mOhm @ 69A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.4V @ 83µA
Supplier Device Package	PG-TO251-3-11
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	125W (Tc)
Series	OptiMOS™
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	69A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IPS12C