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IPS60R360PFD7SAKMA1

Infineon Technologies

Product No:

IPS60R360PFD7SAKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 10A TO251-3

Quantity:

Delivery:

Payment:

In Stock : 932

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.3395

$1.3395
10

$1.19795

$11.9795
100

$0.93423

$93.423
500

$0.771742

$385.871
1000

$0.609273

$609.273
2000

$0.56866

$1137.32
5000

$0.540218

$2701.09
10000

$0.519916

$5199.16

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	534 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	12.7 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	360mOhm @ 2.9A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4.5V @ 140µA
Supplier Device Package	PG-TO251-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	43W (Tc)
Series	CoolMOS™PFD7
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPS60R