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IPT210N25NFDATMA1

Infineon Technologies

Product No:

IPT210N25NFDATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-1

Batch:

Datasheet:

Description:

MV POWER MOS

Quantity:

Delivery:

Payment:

In Stock : 1970

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$9.2435

$9.2435
10

$8.3524

$83.524
100

$6.915145

$691.5145
500

$6.021632

$3010.816
1000

$5.244646

$5244.646

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7000 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	21mOhm @ 69A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 267µA
Supplier Device Package	PG-HSOF-8-1
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	375W (Tc)
Series	OptiMOS™ 3
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	69A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPT210