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IPU60R2K0C6BKMA1

Infineon Technologies

Product No:

IPU60R2K0C6BKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

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Description:

MOSFET N-CH 600V 2.4A TO251-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	6.7 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2Ohm @ 760mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 60µA
Supplier Device Package	PG-TO251-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	22.3W (Tc)
Series	CoolMOS™
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.4A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPU60R