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IQE013N04LM6CGATMA1

Infineon Technologies

Product No:

IQE013N04LM6CGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TTFN-9-1

Batch:

Datasheet:

Description:

40V N-CH FET SOURCE-DOWN CG 3X3

Quantity:

Delivery:

Payment:

In Stock : 2459

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.5745

$2.5745
10

$2.13655

$21.3655
100

$1.700785

$170.0785
500

$1.439098

$719.549
1000

$1.221064

$1221.064
2000

$1.160007

$2320.014

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	1.35mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 51µA
Supplier Device Package	PG-TTFN-9-1
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	2.5W (Ta), 107W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 205A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IQE013