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IQE065N10NM5CGATMA1

Infineon Technologies

Product No:

IQE065N10NM5CGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TTFN-9-1

Batch:

-

Datasheet:

-

Description:

TRENCH >=100V PG-TTFN-9

Quantity:

Delivery:

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In Stock : 9940

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.679

    $2.679

  • 10

    $2.24675

    $22.4675

  • 100

    $1.817445

    $181.7445

  • 500

    $1.615494

    $807.747

  • 1000

    $1.383266

    $1383.266

  • 2000

    $1.302488

    $2604.976

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs 6.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 48µA
Supplier Device Package PG-TTFN-9-1
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 85A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IQE065N

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