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IRC640PBF

Vishay Siliconix

Product No:

IRC640PBF

Manufacturer:

Vishay Siliconix

Package:

TO-220-5

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 200V 18A TO220-5

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Current Sensing
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220-5
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 125W (Tc)
Series HEXFET®
Package / Case TO-220-5
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRC640

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