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IRD3CH31DB6

Infineon Technologies

Product No:

IRD3CH31DB6

Manufacturer:

Infineon Technologies

Package:

Wafer

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Description:

DIODE GEN PURP 1.2KV 50A WAFER

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	240 ns
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	Wafer
Current - Reverse Leakage @ Vr	20 µA @ 1200 V
Series	-
Package / Case	Die
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	2.7 V @ 50 A
Mfr	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Bulk
Current - Average Rectified (Io)	50A
Operating Temperature - Junction	-40°C ~ 150°C
Base Product Number	IRD3CH31