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IRF1010EPBF

Infineon Technologies

Product No:

IRF1010EPBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 84A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 3524

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.33

    $1.33

  • 10

    $1.0906

    $10.906

  • 100

    $0.84854

    $84.854

  • 500

    $0.719207

    $359.6035

  • 1000

    $0.585865

    $585.865

  • 2000

    $0.551522

    $1103.044

  • 5000

    $0.525255

    $2626.275

  • 10000

    $0.50102

    $5010.2

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 12mOhm @ 50A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 200W (Tc)
Series HEXFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 84A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRF1010

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