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IRF1010EZ

Infineon Technologies

Product No:

IRF1010EZ

Manufacturer:

Infineon Technologies

Package:

TO-220AB

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Datasheet:

Description:

MOSFET N-CH 60V 75A TO220AB

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Parameter Info

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.5mOhm @ 51A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 100µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	140W (Tc)
Series	HEXFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube