Home / Single FETs, MOSFETs / IRF3315LPBF

IRF3315LPBF

Infineon Technologies

Product No:

IRF3315LPBF

Manufacturer:

Infineon Technologies

Package:

TO-262

Batch:

Datasheet:

Description:

MOSFET N-CH 150V 21A TO262

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IRF3315LPBF, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IRF3315LPBF and the required quantity in your RFQ. IICSEMI provides the latest quote for IRF3315LPBF without requiring registration. Latest information on IRF3315LPBF: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IRF3315LPBF latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	82mOhm @ 12A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	3.8W (Ta), 94W (Tc)
Series	HEXFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube