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IRF3415L

Infineon Technologies

Product No:

IRF3415L

Manufacturer:

Infineon Technologies

Package:

TO-262

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Datasheet:

Description:

MOSFET N-CH 150V 43A TO262

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	42mOhm @ 22A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	3.8W (Ta), 200W (Tc)
Series	HEXFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube