Home / Single FETs, MOSFETs / IRF3717TR

IRF3717TR

Infineon Technologies

Product No:

IRF3717TR

Manufacturer:

Infineon Technologies

Package:

8-SO

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Datasheet:

Description:

MOSFET N-CH 20V 20A 8SO

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.4mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.45V @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2.5W (Ta)
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)