IRF512
Harris Corporation
Product No:
IRF512
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 1013
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
650
$0.437
$284.05
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 135 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 740mOhm @ 3.4A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 43W (Tc) |
| Series | - |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
| Mfr | Harris Corporation |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
Detail Info
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IRF512 Tags
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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