Home / Single FETs, MOSFETs / IRF5801TRPBF

IRF5801TRPBF

Infineon Technologies

Product No:

IRF5801TRPBF

Manufacturer:

Infineon Technologies

Package:

Micro6™(TSOP-6)

Batch:

Datasheet:

Description:

MOSFET N-CH 200V 600MA MICRO6

Quantity:

Delivery:

Payment:

In Stock : 9743

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.551

$0.551
10

$0.47785

$4.7785
100

$0.33098

$33.098
500

$0.276545

$138.2725
1000

$0.235362

$235.362

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IRF5801TRPBF, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IRF5801TRPBF and the required quantity in your RFQ. IICSEMI provides the latest quote for IRF5801TRPBF without requiring registration. Latest information on IRF5801TRPBF: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IRF5801TRPBF latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	88 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	3.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.2Ohm @ 360mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 250µA
Supplier Device Package	Micro6™(TSOP-6)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	2W (Ta)
Series	HEXFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	600mA (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IRF5801