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IRF6607TR1

Infineon Technologies

Product No:

IRF6607TR1

Manufacturer:

Infineon Technologies

Package:

DIRECTFET™ MT

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Datasheet:

Description:

MOSFET N-CH 30V 27A DIRECTFET

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Parameter Info

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6930 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.3mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	DIRECTFET™ MT
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.6W (Ta), 42W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric MT
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 94A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 7V
Package	Tape & Reel (TR)