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IRF6691TR1PBF

Infineon Technologies

Product No:

IRF6691TR1PBF

Manufacturer:

Infineon Technologies

Package:

DIRECTFET™ MT

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 20V 32A DIRECTFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6580 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.8mOhm @ 15A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package DIRECTFET™ MT
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Series HEXFET®
Package / Case DirectFET™ Isometric MT
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 180A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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