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IRF7342D2PBF

Infineon Technologies

Product No:

IRF7342D2PBF

Manufacturer:

Infineon Technologies

Package:

8-SO

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Description:

MOSFET P-CH 55V 3.4A 8SO

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	105mOhm @ 3.4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	2W (Ta)
Series	FETKY™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube