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IRF7353D1

Infineon Technologies

Product No:

IRF7353D1

Manufacturer:

Infineon Technologies

Package:

8-SO

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 6.5A 8SO

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 32mOhm @ 5.8A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package 8-SO
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2W (Ta)
Series FETKY™
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube

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