Home / Single FETs, MOSFETs / IRF7832Z

IRF7832Z

Infineon Technologies

Product No:

IRF7832Z

Manufacturer:

Infineon Technologies

Package:

8-SO

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Datasheet:

Description:

MOSFET N-CH 30V 21A 8SO

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.35V @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta)
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	21A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube