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IRF8113

Infineon Technologies

Product No:

IRF8113

Manufacturer:

Infineon Technologies

Package:

8-SO

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Description:

MOSFET N-CH 30V 17.2A 8SO

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.6mOhm @ 17.2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta)
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17.2A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube