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IRF9Z34NLPBF

Infineon Technologies

Product No:

IRF9Z34NLPBF

Manufacturer:

Infineon Technologies

Package:

TO-262

Batch:

-

Datasheet:

-

Description:

PLANAR 40<-<100V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 335

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 335

    $0.988

    $330.98

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-262
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Series HEXFET®
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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