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IRFB61N15DPBF

Infineon Technologies

Product No:

IRFB61N15DPBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

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Description:

IRFB61N15 - 12V-300V N-CHANNEL P

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	32mOhm @ 36A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	2.4W (Ta), 330W (Tc)
Series	HEXFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±30V
Package	Bulk