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IRFB812PBF

Infineon Technologies

Product No:

IRFB812PBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

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Datasheet:

Description:

MOSFET N CH 500V 3.6A TO220AB

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.2Ohm @ 2.2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	78W (Tc)
Series	HEXFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFB812