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IRFIZ34E

Infineon Technologies

Product No:

IRFIZ34E

Manufacturer:

Infineon Technologies

Package:

PG-TO220-FP

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Datasheet:

Description:

MOSFET N-CH 60V 21A TO220AB FP

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	42mOhm @ 11A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	PG-TO220-FP
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	37W (Tc)
Series	HEXFET®
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube