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IRFL4310PBF

Infineon Technologies

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IRFL4310PBF

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Infineon Technologies

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Description:

MOSFET N-CH 100V SOT223

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	-
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1W (Ta)
Series	-
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)