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IRFR220,118

NXP USA Inc.

Product No:

IRFR220,118

Manufacturer:

NXP USA Inc.

Package:

DPAK

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Datasheet:

Description:

MOSFET N-CH 200V 4.8A DPAK

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	800mOhm @ 2.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	42W (Tc)
Series	TrenchMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.8A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IRFR2