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IRFS4229PBF

Infineon Technologies

Product No:

IRFS4229PBF

Manufacturer:

Infineon Technologies

Package:

D2PAK

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Datasheet:

Description:

MOSFET N-CH 250V 45A D2PAK

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Parameter Info

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	48mOhm @ 26A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	330W (Tc)
Series	HEXFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube