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IRFSL3206PBF

Infineon Technologies

Product No:

IRFSL3206PBF

Manufacturer:

Infineon Technologies

Package:

TO-262

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 120A TO262

Quantity:

Delivery:

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Payment:

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In Stock : 2000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.66

    $2.66

  • 10

    $2.3864

    $23.864

  • 100

    $1.955575

    $195.5575

  • 500

    $1.664761

    $832.3805

  • 1000

    $1.404014

    $1404.014

  • 2000

    $1.333819

    $2667.638

  • 5000

    $1.283668

    $6418.34

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3mOhm @ 75A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 150µA
Supplier Device Package TO-262
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 300W (Tc)
Series HEXFET®
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFSL3206

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