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IRFSL4010PBF

Infineon Technologies

Product No:

IRFSL4010PBF

Manufacturer:

Infineon Technologies

Package:

TO-262

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 180A TO262

Quantity:

Delivery:

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Payment:

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In Stock : 990

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.477

    $3.477

  • 10

    $3.1198

    $31.198

  • 100

    $2.556165

    $255.6165

  • 500

    $2.176051

    $1088.0255

  • 1000

    $1.83522

    $1835.22

  • 2000

    $1.743459

    $3486.918

  • 5000

    $1.677909

    $8389.545

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 9575 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 215 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.7mOhm @ 106A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-262
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 375W (Tc)
Series HEXFET®
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFSL4010

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