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IRL3102S

Infineon Technologies

Product No:

IRL3102S

Manufacturer:

Infineon Technologies

Package:

D2PAK

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Datasheet:

Description:

MOSFET N-CH 20V 61A D2PAK

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13mOhm @ 37A, 7V
Product Status	Obsolete
Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	89W (Tc)
Series	HEXFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	61A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 7V
Package	Tube