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IRLD110PBF

Vishay Siliconix

Product No:

IRLD110PBF

Manufacturer:

Vishay Siliconix

Package:

4-HVMDIP

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 1A 4DIP

Quantity:

Delivery:

Payment:

In Stock : 2409

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.577

$1.577
10

$1.4136

$14.136
100

$1.136295

$113.6295
500

$0.933584

$466.792
1000

$0.773547

$773.547
2000

$0.720204

$1440.408
5000

$0.693528

$3467.64
10000

$0.666852

$6668.52

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	540mOhm @ 600mA, 5V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	4-HVMDIP
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.3W (Ta)
Series	-
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Package	Tube
Base Product Number	IRLD110