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IRLL2705PBF

Infineon Technologies

Product No:

IRLL2705PBF

Manufacturer:

Infineon Technologies

Package:

SOT-223

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Datasheet:

Description:

MOSFET N-CH 55V 3.8A SOT223

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	40mOhm @ 3.8A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	1W (Ta)
Series	HEXFET®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tube